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to Wafer Product IndexHO CHIEN ELECTRONIC GROUP INC
4" Schottky Wafer / Die
[ 20V - 40V - 60V - 100V ]
| Specification | Die Size | ||||||||
| Die Size | mm | 1.02 | 1.26 | 1.83 | 2.13 | 2.30 | 2.84 | 3.30 | 4.22 |
| mil | 40 | 50 | 72 | 84 | 90.5 | 112 | 130 | 166 | |
| Active Area | mm | 0.90 | 0.90 | 1.02 | 1.22 | 1.46 | 1.91 | 2.20 | 2.64 |
| mil | 35 | 35 | 40 | 48 | 58 | 75 | 87 | 104 | |
| Thickness | 12.5 Mil | ||||||||
| Metalization | Top Metal:
Ag or Al Back Metal: Ni/Cr/Ag |
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| Peak Reverse
Voltage Vrm@25oC |
20V - 40V - 100 Volt | ||||||||
| Max. Forward
Current Io = A (1) |
Amp | 1.0 | 1.0 | 3.0 | 5.0 | 8.0 | 20.0 | 25.0 | 30.0 |
| Max. Surge Current Ifsm (2) |
Contact us for details | ||||||||
| Max. Forward
Voltage Drop @ Io (3) |
Contact us for details | ||||||||
| Max. Reverse
Current @ Vr / 25oC |
Contact us for details | ||||||||
| Operation Temperature | -30 to +125oC | ||||||||
| Storage Temperature | -30 to +125oC | ||||||||
| Die Quantity Per 4" Wafer | Pcs | 7500 | 4573 | 2300 | 1598 | 1430 | 840 | 716 | 395 |
| Note | (1): Current rating is upon heatsink apply. |
| (2): IO:8.3mS with Heatsink applied. | |
| (3): Forward drop is measured by heatsink applied. |
Chip diode products by:
HO CHIEN ELECTRONIC GROUP INC
1687 CURTISS
COURT, LA VERNE, CA 91750, USA
Copyright @ 1995-2005 Ho Chien Electronic
Group, Inc. All rights reserved.